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| DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES * Interdigitated structure provides high emitter efficiency * Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR * Gold metallization realizes very stable characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Input matching cell improves input impedance and allows an easier design of wideband circuits. APPLICATIONS * Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common emitter class-A selective amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 4.2 VCE (V) 16 IC (mA) 400 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL1 (W) 1 Gpo (dB) 6 Zi () 7.5 + j12 ZL () 4 - j8 1997 Feb 21 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature at 0.1 mm from ceramic; t 10 s Tmb 75 C CONDITIONS open emitter RBE = 70 open base - - - - - -65 - - MIN. LTE42012R MAX. 40 20 16 800 8 +200 200 235 V V V UNIT mA W C C C handbook, halfpage 1 MGL006 handbook, 10 MGD973 Ptot (W) IC (A) 8 (1) (2) 6 10-1 4 2 10-2 1 10 16 VCE (V) 102 0 0 50 100 150 200 Tmb (C) Tmb 75 C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE 70 . Fig.2 DC SOAR. Fig.3 Power derating curve. 1997 Feb 21 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE Ccb Cce Ceb PARAMETER collector cut-off current emitter cut-off current DC current gain collector-base capacitance collector-emitter capacitance emitter-base capacitance CONDITIONS VCB = 20 V; IE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 400 mA VCB = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCE = 16 V; VEB = 1.5 V; IE = IC = 0; f = 1 MHz VCB = 10 V; VEB = 1 V; IC = IE = 0; f = 1 MHz - - 15 - - - MIN. - - - 3 1.5 28 TYP. PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS Tj = 75 C Tj = 75 C; note 1 LTE42012R MAX. 10 0.7 UNIT K/W K/W MAX. 200 600 100 - - - UNIT A nA pF pF pF 1997 Feb 21 4 Philips Semiconductors Product specification NPN microwave power transistor Table 1 f (MHz) 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 4600 4700 4800 4900 5000 LTE42012R Common-emitter scattering parameters: VCE = 16 V; IC = 400 mA; Tmb = 25 C; Zo = 50 ; typical values. s11 MAGNITUDE (ratio) 0.84 0.84 0.84 0.85 0.85 0.85 0.85 0.85 0.85 0.84 0.83 0.82 0.80 0.78 0.76 0.74 0.71 0.70 0.67 0.66 0.64 0.64 0.65 0.67 0.69 0.72 0.75 0.76 0.78 0.79 0.77 ANGLE (deg) 163 161 159 158 156 155 154 153 152 150 149 149 147 146 145 144 143 142 142 142 142 142 143 143 143 141 139 137 135 133 130 s21 MAGNITUDE (ratio) 0.049 0.051 0.054 0.055 0.057 0.060 0.064 0.067 0.071 0.073 0.076 0.080 0.084 0.088 0.091 0.093 0.095 0.095 0.093 0.091 0.088 0.084 0.077 0.068 0.060 0.054 0.050 0.050 0.054 0.061 0.068 ANGLE (deg) 64 62.7 60.4 58.8 57.5 56.1 54.9 53.1 51.3 49.5 48.0 46.0 44.1 40.5 36.1 34.4 30.7 26.3 21.6 17.0 13.2 9.7 7.0 5.9 8.2 13.8 20.5 31.2 43.5 46.6 54.3 s12 MAGNITUDE (ratio) 0.96 0.94 0.93 0.91 0.91 0.90 0.89 0.89 0.89 0.90 0.90 0.91 0.92 0.93 0.95 0.97 0.98 0.99 0.99 1.00 0.98 0.95 0.91 0.86 0.81 0.74 0.68 0.61 0.56 0.50 0.44 ANGLE (deg) 47.2 43.3 39.8 36.2 32.2 29.1 24.6 21.2 17.2 13.8 9.3 5.2 0.6 -4.3 -9.7 -16.1 -23.2 -30.6 -37.9 -46.6 -55.8 -64.9 -73.8 -82.6 -92.3 -101.7 -110.6 -119.7 -129.1 -139.5 -148.6 s22 MAGNITUDE (ratio) 0.60 0.59 0.59 0.59 0.60 0.60 0.60 0.60 0.61 0.62 0.62 0.63 0.64 0.65 0.67 0.69 0.70 0.73 0.76 0.79 0.82 0.85 0.88 0.90 0.93 0.94 0.95 0.96 0.97 0.97 0.97 ANGLE (deg) 179.3 178.0 175.6 174.2 172.6 171.1 169.8 168.6 167.1 165.7 164.7 163.8 163.0 161.5 160.9 159.6 158.3 156.2 153.6 150.7 147.0 143.1 138.4 133.6 129.3 124.9 120.1 116.5 113.5 110.1 106.7 1997 Feb 21 5 Philips Semiconductors Product specification NPN microwave power transistor APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common emitter class-A selective circuit; note 1. MODE OF OPERATION Class-A Note f (GHz) 4.2 VCE (V) 16 IC (mA) 400 PL1 (W) >1 typ. 1.25 Gpo (dB) >6 typ. 7 LTE42012R Zi () 7.5 + j12 ZL () 4 - j8 1. Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners. handbook, full pagewidth ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, 2.2 2.5 2 6 2.5 1 1.5 6 2.5 2 5.5 8.5 11.2 12.8 6 6 11.3 30 30 MSA102 Dimensions in mm. Input striplines on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.54); thickness: 0.8 mm. Fig.4 Prematching test circuit board. 1997 Feb 21 6 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R handbook, halfpage 1.6 MGL013 handbook, halfpage 10 MGL059 1.5 PL1 (W) 1 PL (W) 1.2 (1) Gpo (dB) PL1 8 Gpo PL1 0.8 6 0.4 0.5 0 0 0.1 0.2 0.3 Pi (W) 0.4 4 200 300 400 500 IC (mA) 0 600 f = 4.2 GHz; VCE = 16 V; IC = 400 mA (regulated). (1) Gpo = 7 dB. f = 4.2 GHz; VCE = 16 V. Fig.6 Fig.5 Load power as a function of input power. Low level power gain associated with PL1 as a function of collector current. 1997 Feb 21 7 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE LTE42012R handbook, full pagewidth 0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max 1.7 max 3.2 2.9 5.1 5.5 max 3.4 2 2.0 7.1 14.2 (1) 4.5 min MBC888 Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5 (1) Flatness of this area ensures full thermal contact with bolt head. Fig.7 SOT440A. 1997 Feb 21 8 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values LTE42012R This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 21 9 Philips Semiconductors Product specification NPN microwave power transistor NOTES LTE42012R 1997 Feb 21 10 Philips Semiconductors Product specification NPN microwave power transistor NOTES LTE42012R 1997 Feb 21 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 21 Document order number: 9397 750 01813 |
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